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         DSEP30-12CR ns HiPerDynFRED Symbol Definition R a t i n g s Features / Advantages: typ. max. IFSM IR A V 250 IFAV A VF 4.98 RthJC 0.60 K/W VR = 1200 1 3 min. 30 t = 10 ms (50 Hz), sine Applications: VRRM V 1200 V°C= 25 250 μA TVJ TVJ =mA150 2 °C Package: Part number VR = 1200 TVJ =°C25 IF =A30 V TC = 120°C rectangular 0.5d = Ptot 250 W TC = 25 °C TVJ 175 °C -55 VRRM = IFAV = 1200 V 30 A TVJ = 45°C DSEP30-12CR V max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current Conditions Unit 6.33 TVJ =25 °C CJ junction capacitance V = V; TR 800 pFf = 1 MHz = °CVJ 25 VF0 V 1.42 TVJ = 175°C rF 24.4 m? V 3.18 TVJ =°C150 IF =A30 V 4.40 IF =A60 IF =A60 threshold voltage slope resistance for power loss calculation only Backside: isolated 5.5 A TVJ =°C25 reverse recovery time A 12.5 15 70 ns trr = 15 ns ● Housing: ISOPLUS247 High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Single Diode ●rIndustry standard outline ●rDCB isolated backside ●rIsolation Voltage 3000 V ●rEpoxy meets UL 94V-0 ●rRoHS compliant IRM max. reverse recovery current IF =A;30 VR =V600 T=VJ 100°C -diF/dt =A/μs600 trr TVJ =°C25 T=VJ 100°C 13 thermal resistance junction to case ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) average forward current IXYS reserves the right to change limits, conditions and dimensions. ? 2011 IXYS all rights reserved 20110201a Data according to IEC 60747and per diode unless otherwise specified |